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Sunday 31 August 2014

Varactor Diode



Varactor Diode
A varactor , also known as tuning diode, a variable capacitance diode, a varicap diode or variable reactance diode, is a diode that exploit the principle of operation of semiconductor diode, to act or behave like a variable capacitor i.e. has variable capacitance, which is a function of the external voltage impressed on its terminals. As we know that a capacitor is basically a device constructed using two parallel plates (conductor) separated by an insulator or a dielectric (insulator) (See: Basic Electronic (Passive Component)).

If we reconsider the electrical characteristics semiconductor diodes as in figure 3.15.






Figure 3.15: Semiconductor diode

The P-side is a good conductor owing to the presence of excess holes; also the N-side is a good conductor due to the presence of excess free electrons. The depletion layer is ridden of charge carriers thus an insulator. This can be likened to the construction of a typical capacitor. 
 









 Figure 3.16: Semiconductor Diode depicted as a capacitor

Also, we will recall that when diode is forward biased, the width of the depletion region becomes narrower with respect to the external voltage supply, the more the voltage the narrower is the depletion region, until the voltage overcomes the built-in barrier and allow current flow.

We can also recall also that; the Capacitance of a capacitor is Proportional to the area A of the plate and inversely proportional to the distance d between the plate in an equation given by;






            ε0 – permittivity in free space
            εr  - dielectric constant (relative permittivity)
            A – area of the plate
            d – distance of plates apart

Now, employing the semiconductor diode as a capacitor, the area A of the plates (P and N-sides) can be increased, by reducing the depletion layer (distance d, between the plates) through applying an external voltage of a certain level, thus increasing its capacitance, while we can reduce its capacitance by reducing the applied voltage which increases their distance apart (depletion region) and reduces the cross sectional each sides (P- and N-) of the diode. This means that the capacitance is varied with respect to the applied voltage, thus provides the variable capacitor property and called a Varactor.

See Also:
Photo-diode           



Photo-diode

Photo-diode


This is another type of diode, it is also a semiconductor diode designed in such a way which, when exposed to light, generates a potential difference or change its electrical resistance. In its operation, when photons of light falls on the semiconductor diode, electrons absorbs energy from the photons, become photo-excited and jump into the conduction band, also leaving holes in the valence band, transport of the free electrons and holes increases the electrical conductivity of the material, when an external voltage is applied it results in a current flow. This is known as Electron-hole photo-generation in the semiconductor diode.










Figure 3.13: Electron-hole photo-generation in Semiconductor diode.





Figure 3.14:   Symbol of a photo-diode.

The circuit symbol of a photo-diode is similar to that of an LED just that the arrows points inward in the case of a photo-diode.
The photo-diode operates in the reverse bias mode, even though is a semiconductor diode and we know it will impose a very high resistance to the flow of current in reversed biased, this is to ensure that the current observed in a circuit involving a photo-diode is solely due to the intensity of the incident light, i.e. photons energy.
Photo-diodes has many applications in electronics design; an example of which is an Opto Isolator.

In some circuit we may need to electrically isolate two different parts of the circuit, i.e. there should be no connections at all but we may still want what happens in one of the circuit to have an effect on the other.









Figure 3.13:  Opto Isolated Circuits

 For example the circuit in figure 3.13, when voltage Vs changes, the intensity of LED L also varies and in essence varies the intensity of light falling on the photo-diode P, which in-turn changes resistance of the photo-diode and this can be detected at V0. Therefore, though the circuit is perfectly isolated with reference to electrical connections, but through light beam they are connected, this is called and Opto-isolator.

See Also:
Light Emitting Diodes (LED)
Varactor Diode



Saturday 30 August 2014

Light Emitting Diodes



Light Emitting Diode (LED)
LEDs are common semiconductor diodes used in many applications today. They emit a fairly narrow bandwidth of light, which can be either visible light at different coloured wavelengths, invisible infra-red light used in remote controls or laser light when they are in forward biased connection in a circuit. It is important to study the working principles of this device because of its various found applications in electronics.

LEDs Applications
-          They are used in displaying numbers in digital clock and some digital instruments.
-          Transmission of information from remote controls
-          As power indicator in appliances
-          There collections form images on jumbo Television screen and illumination of traffic lights.
-          Tiny LEDs are been used to replace the tubes that light up Liquid Crystal Display (LCD) High Definition Television (HDTs) to make very slim televisions.

Construction and Principle of Operation
Instead of the vacuum emitting light source like incandescent bulb or emission of light from gas like the compact fluorescent light bulb,  an LED emits light from a piece of semiconductor material.
The historical discovery of light emission capabilities of semiconductor material, dates back to 1907, when electrical engineer Henry J. Round touched a crystal of silicon carbide found near Niagara Falls with two wires connected to a battery. He reported that on applying 10V between two points on the silicon carbide crystal, the crystal gave out a yellowish light. Though not realised at that time Henry J. Round had operated the first crude solid-state lamp, the light emitting diode.
The light emission mechanism of this semiconductor material is of paramount importance in sense that, most electrical light sources such as incandescence of a hot electrode, luminescence of a glowing plasma, or fluorescence of a phosphor coating, are capable of producing exceedingly high luminous outputs, but each of the conventional light sources is unsuited to a broad range of potential applications because of their slow response time, inherent fragility, and short lifetime.
The LED eliminates these set backs of conventional lamps with its solid-state reliability, speed, and compact size.








Figure 3.6: Symbol of a Light Emitting Diode (LED)

Theory of LED’s operation
The LED is essentially a P-N junction diode.  To realise the light emitting property in most commercial LEDs, they use a heavily doped n and slightly doped p junction.















Figure 3.7:  Unbiased pn+ junction diode (the superscript + on the n indicates and heavily doped n-side).
For better understanding of the principle behind LEDs, let’s consider and unbiased pn+ junction shown in figure 3.7. The depletion region extends mainly into the p-side because it contains lesser charge carrier due to the fact that it was slightly doped as explained earlier. The potential barrier V0 prevents the excess free electron on the n+ side form diffusing into the p-side.
Now, if the pn+ junction is forward biased, as in figure 3.8, at V≥V0, electron from n+ side gets injected into the p-side. But the holes injection from the p side to the n+ side is very less and so the current is primarily due to the flow of electrons into the p-side. These electrons injected into the p-side recombine with the holes. This recombination results in spontaneous emission of photons (light). Noting that the energy of emitted photons is given by; Eg =  Ec-Ev, Ec is the energy of electron in the conduction band, Ev energy of electron the valence band, Eg energy required for an electron to jump form the valence band to the conduction band, (See;Basics of Semiconductor devices) .This effect is called injection electroluminescence. These photons are allowed to escape from the device without being reabsorbed, thus gives the illumination observed in LEDs.














Figure 3.8: Forward biased pn+ junction
The wavelength of the photons of light emitted is derived from the relation shown in the figure 3.8 i.e.  Eg = hv, Eg is the Energy gap, h, is planck’s constant and v, the frequency of the emitted light.
            v = c/λ   c is the speed of light and λ  is the wavelength.
Therefore;




The wavelength λ of the emitted light determines the colour of light emitted by the LEDs. Thus given the value of planck’s constant h = 4.135 ×10-15 eV and speed of light c =3×108m/s, we can determine the wavelength and thus the colour of light emitted by a semiconductor, through its energy gap Eg.
   
For example a semiconductor with band-gap of 3.5eV will emits light of;

 


Given an approximate wavelength of different colours of light as in table 3.1 bellow;

Table 3.1
Color
Wavelength (nm)
Red
780 - 622
Red
780 - 622
Orange
622 - 597
Yellow
597 - 577
Green
577 - 492
Blue
492 - 455
Violet
455 - 390

 








Using table 3.1, then the light emitted by the semiconductor in our example is violet colour.

LEDs in Electronic Circuit
 Using an LED in a circuit, it normally requires about 10mA of current for a bright glow and has about 1.7V across its terminals. Hence, when we connect a 6V power supply to it, we must include a resistor in series to drop the excess 4.3V i.e. (6-1.7)V.


For example in the circuit bellow;











Figure 3.9: LED in a circuit.

To determine the value of R to be connected in the circuit above, we can see that R and the resistance of the LED RLED and thus share the voltage input 6V.
The voltage required across RLED is 1.7V, therefore the voltage needed to be dropped by R is 4.3V.  Also since R and RLED are in series, the same current is passing through them i.e. 10mA (require for LED bright glow).  
Note that, for VR (the voltage across R) to be equall 4.3V and IR (current through R) equal 10mA, we need R value given by;

 
 



The value of R required in the circuit in figure 3.9 is 430Ω.

If you reverse the connection of the 6V battery in the connection of the circuit in figure 3.9, you’ll realise that the LED will not glow at all, this proves that the LED is a diode, i.e. allows the flow of current in only one direction.

 Seven Segment Display
A very common application of LEDs in electronic equipments and devices is in Seven Segment Display. The technique used in applying LED in a seven segment display is to arrange the LED in form of figure 8, as shown in figure 3.10 bellow;












Figure 3.10: Seven Segment LED display
All the 7-segments in figure 3.10 are individual LEDs labelled a – g. They com in two connections, either in a common anode or common cathode connection see figure 3.11a (common anode) and 3.11b (common cathode).











Figure 3.11: LED connections in 7-segment display
In the common anode, all the anodes of each LED are connected together and to the positive pole of the battery (Vcc), while each of the LED is switched on/off individually by connecting to the negative pole of the battery (GND) through the 430Ω resistor with their corresponding switch a to g.
While in the common cathode, the cathode of all the LEDs are connected together and to the negative pole of the battery (GND) through 430Ω resistor for each of the LED. The LEDs are switched on/off individually by connecting to their anode to the positive pole of the battery (Vcc) with their corresponding switch a to g.
The idea behind the 7-segment display is that, by selectively glowing (switched ON) the LEDs a to g, we can generate all the numbers we want from 0-9. See figure 3.12.
 










Figure 3.12: Using 7-Segment LED to display number 0-9.


See Also:
Photo-diode
Varactor Diode

 

Friday 29 August 2014

BPH 221 Lecture Series: Lecture 3 (I-V Characteristics of a diode)


To understand how we can make a useful application of a diode, we require the knowledge of its electrical characteristics. The characteristics of diode can be obtained by using a simple circuit like the one in figure 3.1.












Figure 3.1a:  Circuit diagram of diode in forward bias

In the circuit, we have a milli-ammeter and a protective resistor in series with the diode, the voltmeter V is connected to measure the voltage across the diode. Note that the positive pole of the voltage source is connected to the anode of the diode, meaning that it is in a forward bias connection.  Our objective is to study the current flow and voltage across the diode as the Voltage Vs increases.


 








Figure 3.1b:   Virtual implementation of circuit in figure 3.1a

To demonstrate the I-V characteristics of the diode, we implement the circuit in virtual laboratory, figure 3.1b shows the circuit implementation, the potentiometer P1 is used to vary the voltage output of the voltage source V1 across the diode D1. AM1 and VM1 measure the current and voltage across the diode respectively for every stepwise increase in P1 output.
Simulating the circuit we obtain the DC transfer characteristics of the diode, as shown in figure 3.2, bellow;

                                                                          (a)

















                                (b)



Figure 3.2:  I-V characteristics curve of forward bias diode.

Figure 3.2(a) is showing the potentiometer output against current AM1 and voltage VM1 on different graphs, while figure 3.2(b) shows the VM1 (V) output against AM1 (I) output from the diode (I-V characteristic curve).

We can observe from the curves that, as the voltage VM1  across the diode increases, initially the corresponding current output is very low, unable to give any meaningful indication on the milli-ammeter, but when VM1 value gets to a certain level, 0.35V in our circuit example, you’ll begin to notice some increase in the level of current and at a point the current increases exponentially with respect to the voltage, VM1.
The explanation is that, current starts to flow in the circuit only when the voltage VM1 across the diode has been able to overcome the built-in voltage barrier of the diode, (see discussion in Lecture 1), the exponential increase in current occur at a voltage level a little above the voltage barrier, this is called the cut-in voltage.

We can also study the I-V characteristics of the diode in reverse bias condition. 


 







Figure 3.3a:  Reverse bias connection of the diode.









Figure 3.3b:   Virtual implementation of circuit in figure 3.3a

Here, we can observe that the polarity of V1 is reversed as against the circuit in figure 3.2, now the positive pole of the supply connects to the cathode and the negative pole to the anode of the diode, i.e. in reversed bias connection (see previous lecture). Simulating the circuit we obtain the DC transfer characteristics of the diode, as shown in figure 3.4, bellow;














(a)   Current AM1 and VM1 as they vary against potentiometer output













(b)   Voltage VM1 against Current AM1, I-V Characteristics curve

Figure 3.4: I-V characteristics of a diode in reverse bias connection.

From Figure 3.4(a) and (b), we can observe only a very small negative current bellow -40nA in AM1, compare to current flow in mA in the case of forward bias connection. The infinitesimal current flow is maintained at this same level even as voltage VM1 increases across its axis. The current is so small and unable to give any meaningful indication on the milli-ammeter so it is assumed as zero current (open circuit) with reverse biased connection of the diode.

We can combine the two characteristic curve i.e. reversed and forward biased in a single graph as shown in figure 3.5, bellow;

















Figure 3.5: Combining the Forward and Reverse bias I-V Characteristics curve of a diode.

Types of Diodes:
1.  Light Emitting Diodes (LED):
LEDs are also a type of semiconductor diodes that glows when voltage is applied to it in a forward biased connection. This diode has many applications in electronics. Go to Light Emitting Diodes for discussion on the Construction, Electrical property and Applications of Light emitting diodes (LEDs). 
 2.  Photodiodes:
 Photodiodes are another type of semiconductor diodes, they a designed in such a way which, when exposed to light, generates a potential difference or change its electrical resistance. Go to Photo-diode for a brief discussion on operation and applications of photo-diode. 
3. Varactor Diodes:

A varactor , also known as tuning diode, a variable capacitance diode, a varicap diode or variable reactance diode, is a diode that exploit the principle of operation of semiconductor diode, to act or behave like a variable capacitor i.e. has variable capacitance, which is a function of the external voltage impressed on its terminals. Go to Varactor Diode for a brief discussion on construction and application of varactor diode. 


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I am Adeniran Adetunji, contact email: tunji4physics2@gmail.com